HETEROINTERFACE STABILITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：24

作者：

PEARTON, SJ ^{[1
]}

MALM, DL ^{[1
]}

HEIMBROOK, LA ^{[1
]}

KOVALCHICK, J ^{[1
]}

ABERNATHY, CR ^{[1
]}

CARUSO, R ^{[1
]}

VERNON, SM ^{[1
]}

HAVEN, VE ^{[1
]}

机构：

[1] SPIRE CORP,BEDFORD,MA 01730

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 09期

关键词：

D O I：

10.1063/1.98333

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：682 / 684

页数：3

共 50 条

[1] THICKNESS DEPENDENCE OF MATERIAL QUALITY IN GAAS-ON-SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
PEARTON, SJ
ABERNATHY, CR
CARUSO, R
VERNON, SM
SHORT, KT
BROWN, JM
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HAVEN, VE
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 63 (03) : 775 - 783
[2] NEW MECHANISM FOR SI INCORPORATION IN GAAS-ON-SI HETEROEPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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MURRAY, JJ
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GEORGE, T
WEBER, ER
UMENO, M
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1674 - 1676
[3] HEAVILY SI-DOPED GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
FURUHATA, N
KAKIMOTO, K
YOSHIDA, M
KAMEJIMA, T
[J]. JOURNAL OF APPLIED PHYSICS, 1988, 64 (09) : 4692 - 4695
[4] CHARACTERIZATION OF GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI-ON-INSULATOR
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VERNON, SM
SHORT, KT
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[J]. APPLIED PHYSICS LETTERS, 1987, 51 (15) : 1188 - 1190
[5] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 962 - 964
[6] DEGRADATION OF GAAS-LASERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION ON SI SUBSTRATES
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LOGAN, RA
PINZONE, CJ
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (02) : 89 - 91
[7] CRYSTALLINITY AND SCHOTTKY DIODE CHARACTERISTICS OF GAAS GROWN ON SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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NOTO, N
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JIMBO, T
UMENO, M
[J]. JOURNAL OF APPLIED PHYSICS, 1990, 67 (11) : 6908 - 6913
[8] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SWAMINATHAN, V
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[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5349 - 5353
[9] SI-DOPED GAAS EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[10] LOW ETCH PIT DENSITY GAAS ON SI GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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UMENO, M
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (15) : 1433 - 1435

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