INP GROWN ON SI SUBSTRATES WITH GAP BUFFER LAYERS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：17
|
作者：
KOHAMA, Y
KADOTA, Y
OHMACHI, Y
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 1989年 / 28卷 / 08期
关键词：
D O I：
10.1143/JJAP.28.1337
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1337 / 1340
页数：4
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