INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：16

作者：

DUPUIS, RD ^{[1
]}

CAMPBELL, JC ^{[1
]}

VELEBIR, JR ^{[1
]}

机构：

[1] AT&T BELL LABS,CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

JOURNAL OF CRYSTAL GROWTH | 1986年 / 77卷 / 1-3期

关键词：

D O I：

10.1016/0022-0248(86)90357-X

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：598 / 605

页数：8

共 50 条

[1] DARK-CURRENT AND CAPACITANCE ANALYSIS OF INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
PHILIPPE, P
POULAIN, P
KAZMIERSKI, K
DECREMOUX, B
[J]. JOURNAL OF APPLIED PHYSICS, 1986, 59 (05) : 1771 - 1773
[2] INP/INGAASP/INGAAS AVALANCHE PHOTODIODES WITH SEPARATE ABSORPTION, GRADING AND MULTIPLICATION REGIONS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
VELEBIR, JR
CAMPBELL, JC
QUA, GJ
[J]. ELECTRONICS LETTERS, 1986, 22 (05) : 235 - 236
[3] PLANAR INGAAS PIN PHOTODETECTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
CAMPBELL, JC
VELEBIR, JR
[J]. ELECTRONICS LETTERS, 1986, 22 (01) : 48 - 50
[4] X-RAY-MICROANALYSIS OF INGAAS/INP MULTILAYER STRUCTURES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MCGIBBON, AJ
CHAPMAN, JN
CULLIS, AG
CHEW, NG
BASS, SJ
TAYLOR, LL
[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2293 - 2299
[5] YB-DOPED INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
UWAI, K
NAKAGOME, H
TAKAHEI, K
[J]. APPLIED PHYSICS LETTERS, 1987, 50 (15) : 977 - 979
[6] ISOELECTRONIC DOPING EFFECT IN INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
CHEN, JC
XIE, K
CHEN, JF
CHEN, WK
WIE, CR
LIU, PL
[J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (05): : 3119 - 3120
[7] INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
KURISHIMA, K
MAKIMOTO, T
KOBAYASHI, T
ISHIBASHI, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1991, 30 (2B): : L258 - L261
[8] INASP ISLANDS AT THE LOWER INTERFACE OF INGAAS/INP QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BOHRER, J
KROST, A
BIMBERG, D
[J]. APPLIED PHYSICS LETTERS, 1992, 60 (18) : 2258 - 2260
[9] ER-DOPED INP AND GAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
UWAI, K
NAKAGOME, H
TAKAHEI, K
[J]. APPLIED PHYSICS LETTERS, 1987, 51 (13) : 1010 - 1012
[10] INP/INGAAS DOUBLE-HETEROJUNCTION BIPOLAR-TRANSISTORS GROWN ON (100) SI BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
MAKIMOTO, T
KURISHIMA, K
KOBAYASHI, T
ISHIBASHI, T
[J]. IEEE ELECTRON DEVICE LETTERS, 1991, 12 (07) : 369 - 371

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