PLANAR INGAAS PIN PHOTODETECTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：12

作者：

DUPUIS, RD ^{[1
]}

CAMPBELL, JC ^{[1
]}

VELEBIR, JR ^{[1
]}

机构：

[1] CRAWFORD HILL LAB,HOLMDEL,NJ 07733

来源：

ELECTRONICS LETTERS | 1986年 / 22卷 / 01期

关键词：

D O I：

10.1049/el:19860033

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：48 / 50

页数：3

共 50 条

[1] INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
DUPUIS, RD
CAMPBELL, JC
VELEBIR, JR
[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 598 - 605
[2] ATOMIC ORDERING IN INGAASP AND INGAAS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
CHU, SNG
LOGAN, RA
TANBUNEK, T
[J]. JOURNAL OF APPLIED PHYSICS, 1992, 72 (09) : 4118 - 4124
[3] METALORGANIC CHEMICAL VAPOR-DEPOSITION
DAPKUS, PD
[J]. ANNUAL REVIEW OF MATERIALS SCIENCE, 1982, 12 : 243 - 269
[4] METALORGANIC CHEMICAL VAPOR-DEPOSITION
MILLER, LM
COLEMAN, JJ
[J]. CRC CRITICAL REVIEWS IN SOLID STATE AND MATERIALS SCIENCES, 1988, 15 (01): : 1 - 26
[5] SELECTIVE METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR GAAS PLANAR TECHNOLOGY
NAKAI, K
OZEKI, M
[J]. JOURNAL OF CRYSTAL GROWTH, 1984, 68 (01) : 200 - 205
[6] PHOTOLUMINESCENCE IN CDTE GROWN ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
WANG, CH
CHENG, KY
YANG, SJ
[J]. APPLIED PHYSICS LETTERS, 1985, 46 (10) : 962 - 964
[7] CARBON INCORPORATION IN ZNSE GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
GIAPIS, KP
JENSEN, KF
POTTS, JE
PACHUTA, SJ
[J]. APPLIED PHYSICS LETTERS, 1989, 55 (05) : 463 - 465
[8] ALGAAS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION FOR VISIBLE LASER
MORI, Y
WATANABE, N
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) : 2792 - 2798
[9] OXIDE FERROELECTRIC MATERIALS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
ERBIL, A
BRAUN, W
KWAK, BS
WILKENS, BJ
BOATNER, LA
BUDAI, JD
[J]. JOURNAL OF CRYSTAL GROWTH, 1992, 124 (1-4) : 684 - 689
[10] CHARACTERIZATION OF GAAS FILMS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
SWAMINATHAN, V
VANHAREN, DL
ZILKO, JL
LU, PY
SCHUMAKER, NE
[J]. JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) : 5349 - 5353

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