INP/INGAAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：10
|
作者：
KURISHIMA, K
MAKIMOTO, T
KOBAYASHI, T
ISHIBASHI, T
机构：
[1] NTT LSI Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1991年 / 30卷 / 2B期
关键词：
INP; INGAAS; HBT; MOCVD; ZN DIFFUSION;
D O I：
10.1143/JJAP.30.L258
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We describe the performance of InP/InGaAs heterostructure bipolar transistors (HBTs) grown at low temperature by metalorganic chemical vapor deposition (MOCVD). HBTs with a base thickness of 70 nm and doping level of 1 x 10(19) cm-3 show excellent current gain characteristics (current gains h(FE) > 300, ideality factors n(B) < 1.25) at growth temperatures ranging from 500 to 575-degrees-C. In addition, Zn out-diffusion from the base layers into the undoped spacer layers is well suppressed to as low as 5 x 10(17) cm-3.
引用
收藏
页码：L258 / L261
页数：4
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