ALINAS/GAINAS HETEROSTRUCTURE BIPOLAR-TRANSISTORS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：6
|
作者：
JALALI, B
NOTTENBURG, RN
HOBSON, WS
CHEN, YK
FULLOWAN, T
PEARTON, SJ
JORDAN, AS
机构：
来源：
ELECTRONICS LETTERS | 1989年 / 25卷 / 22期
关键词：
D O I：
10.1049/el:19891004
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1496 / 1498
页数：3
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