INASP ISLANDS AT THE LOWER INTERFACE OF INGAAS/INP QUANTUM-WELLS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：0
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作者：
BOHRER, J
KROST, A
BIMBERG, D
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来源：
APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 18期
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O59 [应用物理学];
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摘要：
The optical properties of narrow InGaAs/InP quantum wells and their dependence on the gas switching procedure during the metalorganic chemical vapor deposition growth process are studied. A transition from In1-xGaxAs monolayer to InAs1-xPx monolayer splitting is observed in the photoluminescence spectrum, if the AsH3 purging time of the InP surface is equal larger than 2 s. This transition is attributed to a P-As exchange at the lower interface (InGaAs on InP) leading to InAs1-xPx interfacial islands, which are larger than the excitonic diameter.
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页码：2258 / 2260
页数：3
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