DARK-CURRENT AND CAPACITANCE ANALYSIS OF INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：15
|
作者：
PHILIPPE, P
POULAIN, P
KAZMIERSKI, K
DECREMOUX, B
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 05期
关键词：
D O I：
10.1063/1.336447
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：1771 / 1773
页数：3
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