ANOMALOUS MG INCORPORATION BEHAVIOR IN INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Mg incorporation behavior in InGaAlP, grown by metalorganic chemical vapor deposition, has been investigated. A large Mg-doping delay was observed, between turning on the Mg-dopant source feeding into the reactor and Mg incorporation into the InGaAlP layer. The Mg-doping delay increased with increasing substrate temperature. The Mg-doping delay for InGaP was about twice as long as that for InAlP at the same Cp2Mg introduction. It is found that the Mg-doping delay decreases monotonically with increasing Mg concentration in the solid phase, independent of substrate temperature and Al composition in the InGaAlP.