ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：50
|
作者：
NISHIKAWA, Y [1 ]
TSUBURAI, Y [1 ]
NOZAKI, C [1 ]
OHBA, Y [1 ]
KOKUBUN, Y [1 ]
KINOSHITA, H [1 ]
机构：
[1] TOSHIBA CORP,DIV SEMICOND,SAIWAI KU,KAWASAKI 210,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期
关键词：
D O I：
10.1063/1.100276
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2182 / 2184
页数：3
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