EFFECTS OF SUBSTRATE MISORIENTATION ON DOPING CHARACTERISTICS AND BAND-GAP ENERGY FOR INGAALP CRYSTALS GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

Effects of substrate misorientation on Zn and Si doping characteristics and band gap energy have been investigated for InGaAlP grown by low-pressure metalorganic chemical vapor deposition. The Zn concentration and the net acceptor concentration for In0.5(Ga0.3Al0.7)0.5P monotonically increased with increasing tilt angle, using (100) substrates tilted towards [011], but they at first decreased and next increased using (100) substrates tilted towards [011BAR]. A similar behavior was found for the tilt angle dependence of the band gap energy of undoped In0.5Ga0.5P. The Si concentration and the net donor concentration of In0.5(Ga0.3Al0.7)0.5P gradually increased with increasing the substrate tilt angle, independent of the tilt direction. Neither the Zn nor the Si electrical activity depended on the substrate orientation.