ZN DOPING CHARACTERISTICS FOR INGAALP GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：50
|
作者：
NISHIKAWA, Y [1 ]
TSUBURAI, Y [1 ]
NOZAKI, C [1 ]
OHBA, Y [1 ]
KOKUBUN, Y [1 ]
KINOSHITA, H [1 ]
机构：
[1] TOSHIBA CORP,DIV SEMICOND,SAIWAI KU,KAWASAKI 210,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 22期
关键词：
D O I：
10.1063/1.100276
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：2182 / 2184
页数：3
相关论文
共 50 条
  • [41] EFFECTS OF TRIMETHYLANTIMONIDE TRIETHYLGALLIUM RATIOS ON EPILAYER PROPERTIES OF GALLIUM ANTIMONIDE GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    JUANG, FS
    SU, YK
    LI, NY
    GAN, KJ
    [J]. JOURNAL OF APPLIED PHYSICS, 1990, 68 (12) : 6383 - 6387
  • [42] ELECTRICAL-PROPERTIES AND ION-IMPLANTATION OF EPITAXIAL GAN, GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    KHAN, MA
    SKOGMAN, RA
    SCHULZE, RG
    GERSHENZON, M
    [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 430 - 432
  • [43] TIN-DOPED GAAS EPILAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TRIETHYLGALLIUM AND TETRAETHYLTIN
    LEE, MK
    CHANG, CY
    [J]. JOURNAL OF APPLIED PHYSICS, 1986, 60 (08) : 2831 - 2834
  • [44] Si delta doped GaN grown by low-pressure metalorganic chemical vapor deposition
    Kim, JH
    Yang, GM
    Choi, SC
    Choi, JY
    Cho, HK
    Lim, KY
    Lee, HJ
    [J]. MRS INTERNET JOURNAL OF NITRIDE SEMICONDUCTOR RESEARCH, 1999, 4
  • [45] EFFECTS OF ZN ELECTRICAL-ACTIVITY ON BAND-GAP ENERGY IN ZN-DOPED INGAALP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, Y
    ISHIKAWA, M
    TSUBURAI, Y
    KOKUBUN, Y
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1989, 28 (11): : L2092 - L2094
  • [46] DOPING PROPERTIES OF GAAS SELECTIVE EPILAYERS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    YAMAGUCHI, K
    KISHIDA, S
    OKAMOTO, K
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1992, 31 (10A): : L1377 - L1380
  • [47] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF BPSG FILMS
    JENKINS, GM
    BULLERWELL, JM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (09) : C405 - C405
  • [48] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SIOX FILMS
    ABERNATHEY, J
    JOHNSON, D
    NESBIT, L
    CAMPBELL, D
    LAM, C
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1985, 132 (06) : C222 - C222
  • [49] LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF TITANIUM SILICIDE
    TEDROW, PK
    ILDEREM, V
    REIF, R
    [J]. APPLIED PHYSICS LETTERS, 1985, 46 (02) : 189 - 191
  • [50] GROWTH OF HIGH-QUALITY ZNSE FILMS BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
    YOSHIKAWA, A
    TANAKA, K
    YAMAGA, S
    KASAI, H
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (06): : L424 - L426
12345