ELECTRICAL-PROPERTIES AND ION-IMPLANTATION OF EPITAXIAL GAN, GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：52
|
作者：
KHAN, MA [1 ]
SKOGMAN, RA [1 ]
SCHULZE, RG [1 ]
GERSHENZON, M [1 ]
机构：
[1] UNIV SO CALIF,DEPT MAT SCI,LOS ANGELES,CA 90089
来源：
APPLIED PHYSICS LETTERS | 1983年 / 42卷 / 05期
关键词：
D O I：
10.1063/1.93953
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：430 / 432
页数：3
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