ON THE GATE CAPACITANCE OF METAL-OXIDE SEMICONDUCTOR STRUCTURES IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS

被引：15

作者：

GHATAK, KP ^{[1
]}

BISWAS, S ^{[1
]}

机构：

[1] BENGAL ENGN COLL,DEPT ELECTR & COMMUN ENGN,HOWRAH 711103,W BENGAL,INDIA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期

关键词：

D O I：

10.1116/1.584431

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：104 / 110

页数：7

共 50 条

[21] AN INVESTIGATION OF THE VALLEY SPLITTING IN N-CHANNEL SILICON (100) INVERSION-LAYERS
NICHOLAS, RJ
VONKLITZING, K
ENGLERT, T
SOLID STATE COMMUNICATIONS, 1980, 34 (01) : 51 - 55
[22] THEORETICAL ANALYSIS OF THE OSCILLATORY DIFFUSIVITY-MOBILITY RATIO IN N-CHANNEL INVERSION LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD.
Mondal, M.
Ghatak, K.P.
1600, (62):
[23] MINIGAPS AND HIGH-DENSITY ACTIVATED TRANSPORT IN N-CHANNEL SI INVERSION-LAYERS
SALLES, JBV
CLOSS, H
SENNA, JR
STILES, PJ
PHYSICAL REVIEW B, 1988, 37 (15): : 8912 - 8914
[24] VALLEY SPLITTING IN SI(100) N-CHANNEL INVERSION-LAYERS DETERMINED BY A TILTED FIELD METHOD
WAKABAYASHI, J
KIMURA, S
KAWAJI, S
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1985, 54 (10) : 3885 - 3888
[25] Pneumatically actuated positive gain microvalve with n-channel metal-oxide semiconductor-like behaviour
Perdigones, F.
Luque, A.
Quero, J. M.
MICRO & NANO LETTERS, 2011, 6 (06) : 363 - 365
[26] THEORY OF ELECTRONIC-PROPERTIES IN N-CHANNEL INVERSION-LAYERS ON NARROW-GAP SEMICONDUCTORS .1. SUBBAND STRUCTURE OF INSB
TAKADA, Y
ARAI, K
UCHIMURA, N
UEMURA, Y
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1980, 49 (05) : 1851 - 1858
[27] EFFECT OF A QUANTIZING MAGNETIC-FIELD ON THE DIFFUSIVITY-MOBILITY RATIO OF THE CARRIERS IN N-CHANNEL INVERSION-LAYERS ON SMALL GAP SEMICONDUCTORS
CHAKRAVARTI, AN
CHOWDHURY, AK
GHATAK, KP
DHAR, A
CHOUDHURY, DR
CZECHOSLOVAK JOURNAL OF PHYSICS, 1981, 31 (08) : 905 - 912
[28] NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors
Gao, W
Conley, JF
Ono, Y
APPLIED PHYSICS LETTERS, 2004, 84 (23) : 4666 - 4668
[29] INFLUENCE OF ELECTRON-IRRADIATION ON THE HALL-MOBILITY OF HOLES IN INVERSION-LAYERS OF METAL-OXIDE-SEMICONDUCTOR STRUCTURES
GUZEV, AA
GURTOV, VA
RZHANOV, AV
FRANTSUZOV, AA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (04): : 451 - 454
[30] THEORETICAL-ANALYSIS OF THE EINSTEIN RELATION IN N-CHANNEL INVERSION-LAYERS ON A3-IIB2-V SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION
GHATAK, KP
MITRA, B
MONDAL, M
ANNALEN DER PHYSIK, 1991, 48 (04) : 283 - 294

← 1 2 3 4 5 →