ON THE GATE CAPACITANCE OF METAL-OXIDE SEMICONDUCTOR STRUCTURES IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS

被引：15
|
作者：
GHATAK, KP [1 ]
BISWAS, S [1 ]
机构：
[1] BENGAL ENGN COLL,DEPT ELECTR & COMMUN ENGN,HOWRAH 711103,W BENGAL,INDIA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期
关键词：
D O I：
10.1116/1.584431
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：104 / 110
页数：7
相关论文
共 50 条
  • [41] Effects of gate-last and gate-first process on deep submicron inversion-mode InGaAs n-channel metal-oxide-semiconductor field effect transistors
    Gu, J. J.
    Wu, Y. Q.
    Ye, P. D.
    JOURNAL OF APPLIED PHYSICS, 2011, 109 (05)
  • [42] THEORY OF ELECTRONIC-PROPERTIES IN N-CHANNEL INVERSION-LAYERS ON NARROW-GAP SEMICONDUCTORS .2. INTER-SUBBAND OPTICAL-ABSORPTION ON INSB
    TAKADA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1981, 50 (06) : 1998 - 2005
  • [43] Impact of Wave Function Penetration into Gate Oxide on Gate Capacitance and Threshold Voltage of n-Channel Double Gate Junction Less Transistor
    Adnan, Md. Mohsinur Rahman
    Rahman, Mohammad Shahidur
    2018 INTERNATIONAL CONFERENCE ON ADVANCEMENT IN ELECTRICAL AND ELECTRONIC ENGINEERING (ICAEEE), 2018,
  • [44] Simple and accurate method of modeling gate current of n-channel metal-oxide-semiconductor field-effect transistor
    Yeh, Chun-Chia
    Neih, Chun-Feng
    Chen, Yen-Yu
    Gong, Jeng
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2007, 46 (8A): : 5133 - 5135
  • [45] Simple and accurate method of modeling gate current of N-channel metal-oxide-semiconductor field-effect transistor
    Yeh, Chun-Chia
    Neih, Chun-Feng
    Chen, Yen-Yu
    Gong, Jeng
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2007, 46 (8 A): : 5133 - 5135
  • [46] X-RAY-LITHOGRAPHY APPLIED TO THE FABRICATION OF 1-MU-M N-CHANNEL METAL-OXIDE SEMICONDUCTOR (NMOS) CIRCUITS
    FULS, EN
    PROCEEDINGS OF THE SOCIETY OF PHOTO-OPTICAL INSTRUMENTATION ENGINEERS, 1982, 333 : 113 - 117
  • [47] Strain induced changes in the gate leakage current of n-channel metal-oxide-semiconductor field-effect transistors
    Yang, Xiaodong
    Choi, Younsung
    Lim, Jisong
    Nishida, Toshikazu
    Thompson, Scott
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (01)
  • [48] Mechanism for improvement of n-channel metal-oxide-semiconductor transistors by tensile stress
    Yang, Peizhen
    Lau, W. S.
    Lai, Seow Wei
    Lo, V. L.
    Toh, L. F.
    Wang, Jacob
    Siah, S. Y.
    Chan, L.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
  • [49] SUB-BAND STRUCTURES OF N-CHANNEL INVERSION LAYERS ON III-V COMPOUNDS - POSSIBILITY OF GATE CONTROLLED GUNN-EFFECT
    TAKADA, Y
    UEMURA, Y
    JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1977, 43 (01) : 139 - 150
  • [50] Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
    De Souza, J. P.
    Kiewra, E.
    Sun, Y.
    Callegari, A.
    Sadana, D. K.
    Shahidi, G.
    Webb, D. J.
    Fompeyrine, J.
    Germann, R.
    Rossel, C.
    Marchiori, C.
    APPLIED PHYSICS LETTERS, 2008, 92 (15)
12345