ON THE GATE CAPACITANCE OF METAL-OXIDE SEMICONDUCTOR STRUCTURES IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS

被引：15
|
作者：
GHATAK, KP [1 ]
BISWAS, S [1 ]
机构：
[1] BENGAL ENGN COLL,DEPT ELECTR & COMMUN ENGN,HOWRAH 711103,W BENGAL,INDIA
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1989年 / 7卷 / 01期
关键词：
D O I：
10.1116/1.584431
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：104 / 110
页数：7
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