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HIGH-VOLTAGE N-CHANNEL METAL-OXIDE-SEMICONDUCTOR TECHNOLOGY
被引:1
|
作者
:
ABBOTT, RS
论文数:
0
引用数:
0
h-index:
0
机构:
Northern Telecom Electronics,, Ottawa, Ont, Can, Northern Telecom Electronics, Ottawa, Ont, Can
ABBOTT, RS
ELLUL, JP
论文数:
0
引用数:
0
h-index:
0
机构:
Northern Telecom Electronics,, Ottawa, Ont, Can, Northern Telecom Electronics, Ottawa, Ont, Can
ELLUL, JP
HADAWAY, RA
论文数:
0
引用数:
0
h-index:
0
机构:
Northern Telecom Electronics,, Ottawa, Ont, Can, Northern Telecom Electronics, Ottawa, Ont, Can
HADAWAY, RA
WHITE, JJ
论文数:
0
引用数:
0
h-index:
0
机构:
Northern Telecom Electronics,, Ottawa, Ont, Can, Northern Telecom Electronics, Ottawa, Ont, Can
WHITE, JJ
机构
:
[1]
Northern Telecom Electronics,, Ottawa, Ont, Can, Northern Telecom Electronics, Ottawa, Ont, Can
来源
:
CANADIAN JOURNAL OF PHYSICS
|
1985年
/ 63卷
/ 06期
关键词
:
D O I
:
10.1139/p85-147
中图分类号
:
O4 [物理学];
学科分类号
:
0702 ;
摘要
:
Integrated circuit manufacture
引用
收藏
页码:897 / 900
页数:4
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h-index:
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58
(02)
: 134
-
136
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论文数:
0
引用数:
0
h-index:
0
机构:
University of California, San Diego, Electrical and Computer Engineering Department, San Diego
LEE, SH
[J].
APPLIED PHYSICS LETTERS,
1994,
64
(06)
: 724
-
726
[7]
NbO as gate electrode for n-channel metal-oxide-semiconductor field-effect-transistors
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论文数:
0
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h-index:
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引用数:
0
h-index:
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论文数:
0
引用数:
0
h-index:
0
机构:
Sharp Labs Amer, Camas, WA 98607 USA
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Ono, Y
[J].
APPLIED PHYSICS LETTERS,
2004,
84
(23)
: 4666
-
4668
[8]
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论文数:
0
引用数:
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h-index:
0
机构:
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论文数:
0
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h-index:
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TATA INST FUNDAMENTAL RES,SOLID STATE ELECTR GRP,BOMBAY 400005,INDIA
ARORA, BM
[J].
APPLIED PHYSICS LETTERS,
1990,
56
(12)
: 1152
-
1153
[9]
Origin of microwave noise from an n-channel metal-oxide-semiconductor field effect transistor
Pantisano, L
论文数:
0
引用数:
0
h-index:
0
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Cheung, KP
论文数:
0
引用数:
0
h-index:
0
机构:
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Cheung, KP
[J].
JOURNAL OF APPLIED PHYSICS,
2002,
92
(11)
: 6679
-
6683
[10]
N-channel metal-oxide-semiconductor transistors fabricated in a silicon film bonded onto sapphire
[J].
1600,
(64):
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