MINIGAPS AND HIGH-DENSITY ACTIVATED TRANSPORT IN N-CHANNEL SI INVERSION-LAYERS

被引：2

作者：

SALLES, JBV ^{[1
]}

CLOSS, H ^{[1
]}

SENNA, JR ^{[1
]}

STILES, PJ ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.37.8912

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8912 / 8914

页数：3

共 50 条

[1] EFFECTS OF A STAIRCASE ON MINIGAPS IN SI INVERSION-LAYERS
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[2] PIEZORESISTANCE IN N-CHANNEL INVERSION-LAYERS OF SILICON FILMS ON SAPPHIRE
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[3] ON THE EFFECTIVE ELECTRON MASS IN N-CHANNEL INVERSION-LAYERS OF GE
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[4] VALLEY SPLITTING IN SI(100) N-CHANNEL INVERSION-LAYERS DETERMINED BY A TILTED FIELD METHOD
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[7] ANISOTROPY OF PIEZORESISTANCE IN N-CHANNEL INVERSION-LAYERS OF METAL-OXIDE-SEMICONDUCTOR TRANSISTORS ON (001)SI
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[8] ON THE GATE-CONTROLLED SURFACE CAPACITANCE OF MOS STRUCTURES OF SI HAVING N-CHANNEL INVERSION-LAYERS
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[9] OPTICAL MEASUREMENTS OF THE MINIGAPS IN ELECTRON INVERSION-LAYERS ON VICINAL PLANES OF SI(001)
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[10] ON THE GATE CAPACITANCE OF MOS STRUCTURES IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS
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