MINIGAPS AND HIGH-DENSITY ACTIVATED TRANSPORT IN N-CHANNEL SI INVERSION-LAYERS

被引：2
|
作者：
SALLES, JBV [1 ]
CLOSS, H [1 ]
SENNA, JR [1 ]
STILES, PJ [1 ]
机构：
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
来源：
PHYSICAL REVIEW B | 1988年 / 37卷 / 15期
关键词：
D O I：
10.1103/PhysRevB.37.8912
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：8912 / 8914
页数：3
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