MINIGAPS AND HIGH-DENSITY ACTIVATED TRANSPORT IN N-CHANNEL SI INVERSION-LAYERS

被引：2

作者：

SALLES, JBV ^{[1
]}

CLOSS, H ^{[1
]}

SENNA, JR ^{[1
]}

STILES, PJ ^{[1
]}

机构：

[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912

来源：

PHYSICAL REVIEW B | 1988年 / 37卷 / 15期

关键词：

D O I：

10.1103/PhysRevB.37.8912

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：8912 / 8914

页数：3

共 50 条

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