ON THE EFFECTIVE ELECTRON MASS IN N-CHANNEL INVERSION-LAYERS OF GE

被引：27

作者：

MITRA, B ^{[1
]}

GHATAK, KP ^{[1
]}

机构：

[1] JADAVPUR UNIV,FAC ENGN & TECHNOL,DEPT ELECTR & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 02期

关键词：

D O I：

10.1016/0038-1101(89)90187-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / 178

页数：2

共 50 条

[1] THEORETICAL-ANALYSIS OF THE EFFECTIVE ELECTRON MASS IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS
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