ON THE EFFECTIVE ELECTRON MASS IN N-CHANNEL INVERSION-LAYERS OF GE

被引：27
|
作者：
MITRA, B [1 ]
GHATAK, KP [1 ]
机构：
[1] JADAVPUR UNIV,FAC ENGN & TECHNOL,DEPT ELECTR & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA
来源：
SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 02期
关键词：
D O I：
10.1016/0038-1101(89)90187-1
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：177 / 178
页数：2
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