ON THE EFFECTIVE ELECTRON MASS IN N-CHANNEL INVERSION-LAYERS OF GE

被引：27

作者：

MITRA, B ^{[1
]}

GHATAK, KP ^{[1
]}

机构：

[1] JADAVPUR UNIV,FAC ENGN & TECHNOL,DEPT ELECTR & TELECOMMUN ENGN,CALCUTTA 700032,W BENGAL,INDIA

来源：

SOLID-STATE ELECTRONICS | 1989年 / 32卷 / 02期

关键词：

D O I：

10.1016/0038-1101(89)90187-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：177 / 178

页数：2

共 50 条

[21] CHARGE-DENSITY AND ORIENTATION DEPENDENCE OF THE EFFECTIVE MASS IN ELECTRON INVERSION-LAYERS ON THE PRINCIPAL SURFACES OF SI
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[22] THEORETICAL-ANALYSIS OF THE OSCILLATORY GATE CAPACITANCE IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION
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[24] EFFECT OF SURFACE ELECTRIC-FIELD ON THE EFFECTIVE ELECTRON MASS IN INVERSION-LAYERS ON SMALL-GAP SEMICONDUCTORS
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[29] EFFECT OF A QUANTIZING MAGNETIC-FIELD ON THE DIFFUSIVITY-MOBILITY RATIO OF THE CARRIERS IN N-CHANNEL INVERSION-LAYERS ON SMALL GAP SEMICONDUCTORS
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[30] THEORY OF ELECTRONIC-PROPERTIES IN N-CHANNEL INVERSION-LAYERS ON NARROW-GAP SEMICONDUCTORS .1. SUBBAND STRUCTURE OF INSB
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