ELECTRON-MOBILITY IN SI INVERSION-LAYERS

被引：8
|
作者：
MASAKI, K [1 ]
TANIGUCHI, K [1 ]
HAMAGUCHI, C [1 ]
机构：
[1] OSAKA UNIV,FAC ENGN,DEPT ELECTR ENGN,SUITA,OSAKA 565,JAPAN
来源：
SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期
关键词：
D O I：
10.1088/0268-1242/7/3B/151
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Electron mobility in Si inversion layers has been investigated. The effective-field and temperature dependences of the effective mobility are analysed by the model, which is based on the interactions of a two-dimensional electron gas confined in the inversion layer with acoustic phonons, inter-valley phonons, surface roughness and ionized impurities.
引用
收藏
页码：B573 / B575
页数：3
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