ELECTRON-MOBILITY IN SI INVERSION-LAYERS

被引：8

作者：

MASAKI, K ^{[1
]}

TANIGUCHI, K ^{[1
]}

HAMAGUCHI, C ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN,DEPT ELECTR ENGN,SUITA,OSAKA 565,JAPAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/151

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron mobility in Si inversion layers has been investigated. The effective-field and temperature dependences of the effective mobility are analysed by the model, which is based on the interactions of a two-dimensional electron gas confined in the inversion layer with acoustic phonons, inter-valley phonons, surface roughness and ionized impurities.

引用

页码：B573 / B575

页数：3

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