THEORETICAL ANALYSIS OF THE OSCILLATORY DIFFUSIVITY-MOBILITY RATIO IN N-CHANNEL INVERSION LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS IN THE PRESENCE OF A QUANTIZING MAGNETIC FIELD.

被引：0

作者：

Mondal, M. ^{[1
]}

Ghatak, K.P. ^{[1
]}

机构：

[1] Univ Coll of Science &, Technology, Calcutta, India, Univ Coll of Science & Technology, Calcutta, India

来源：

| 1600年 / 62期

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摘要：

SEMICONDUCTING CADMIUM COMPOUNDS

引用

共 21 条

[1] THEORETICAL-ANALYSIS OF THE OSCILLATORY DIFFUSIVITY-MOBILITY RATIO IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD
MONDAL, M
GHATAK, KP
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 1986, 62 (01) : 115 - 119
[2] ON THE DIFFUSIVITY-MOBILITY RATIO OF THE CARRIERS IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE-SEMICONDUCTORS
GHATAK, KP
CHATTOPADHYAY, N
MONDAL, M
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 44 (04): : 305 - 312
[3] EFFECT OF A QUANTIZING MAGNETIC-FIELD ON THE DIFFUSIVITY-MOBILITY RATIO OF THE CARRIERS IN N-CHANNEL INVERSION-LAYERS ON SMALL GAP SEMICONDUCTORS
CHAKRAVARTI, AN
CHOWDHURY, AK
GHATAK, KP
DHAR, A
CHOUDHURY, DR
CZECHOSLOVAK JOURNAL OF PHYSICS, 1981, 31 (08) : 905 - 912
[4] INFLUENCE OF ALLOY COMPOSITION ON THE DIFFUSIVITY-MOBILITY RATIO IN N-CHANNEL INVERSION-LAYERS ON TERNARY SEMICONDUCTORS
CHAKRAVARTI, AN
CHOWDHURY, AK
GHATAK, KP
CHOUDHURY, DR
CZECHOSLOVAK JOURNAL OF PHYSICS, 1980, 30 (10) : 1161 - 1166
[5] THEORETICAL-ANALYSIS OF THE GATE CAPACITANCE IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD
GHATAK, KP
MONDAL, M
ZEITSCHRIFT FUR PHYSIK B-CONDENSED MATTER, 1986, 64 (02): : 223 - 226
[6] THEORETICAL-ANALYSIS OF THE OSCILLATORY GATE CAPACITANCE IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS UNDER MAGNETIC QUANTIZATION
MONDAL, M
CHATTOPADHYAY, N
GHATAK, KP
CZECHOSLOVAK JOURNAL OF PHYSICS, 1988, 38 (08) : 885 - 898
[7] INFLUENCE OF ALLOY COMPOSITION ON THE DEPENDENCE OF THE DIFFUSIVITY-MOBILITY RATIO IN TERNARY SEMICONDUCTORS ON A QUANTIZING MAGNETIC-FIELD
CHAKRAVARTI, AN
CHOWDHURY, AK
GHOSH, S
GHATAK, KP
DHAR, A
CZECHOSLOVAK JOURNAL OF PHYSICS, 1981, 31 (09) : 1037 - 1042
[8] THEORETICAL-ANALYSIS OF THE EFFECTIVE ELECTRON MASS IN N-CHANNEL INVERSION-LAYERS ON TERNARY CHALCOPYRITE SEMICONDUCTORS
MONDAL, M
GHATAK, KP
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 139 (01): : 185 - 193
[9] THEORETICAL-ANALYSIS OF THE OSCILLATORY DIFFUSIVITY MOBILITY RATIO IN DEGENERATE N-INSB IN THE PRESENCE OF A QUANTIZING MAGNETIC-FIELD
GHATAK, KP
MONDAL, M
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1987, 139 (01): : 195 - 203
[10] THEORETICAL-ANALYSIS OF OSCILLATORY HEAT-CAPACITY IN N-CHANNEL INVERSION-LAYERS ON TERNARY SEMICONDUCTORS
MONDAL, M
GHATAK, KP
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1985, 128 (01): : K21 - K27

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