THEORETICAL-ANALYSIS OF OSCILLATORY HEAT-CAPACITY IN N-CHANNEL INVERSION-LAYERS ON TERNARY SEMICONDUCTORS

被引：2

|

作者：

MONDAL, M

GHATAK, KP

机构：

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1985年 / 128卷 / 01期

关键词：

D O I：

10.1002/pssb.2221280144

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：K21 / K27

页数：7

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