ACTIVATION OF SHALLOW, HIGH-DOSE BF2+ IMPLANTS INTO SILICON BY RAPID THERMAL-PROCESSING

被引：15
|
作者：
POWELL, RA
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期
关键词：
D O I：
10.1063/1.333818
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2837 / 2843
页数：7
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