RAPID THERMAL-PROCESSING TO IMPROVE THE EPITAXY OF (100) SILICON ON (1102) SAPPHIRE

被引：10

|

作者：

PFEIFFER, L

PHILLIPS, JM

LUTHER, KE

WEST, KW

BATSTONE, JL

STEVIE, FA

MAURITS, JEA

机构：

[1] AT&T BELL LABS,ALLENTOWN,PA 18103

[2] UNION CARBIDE CORP,WASHOUGAL,WA 98671

来源：

APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 08期

关键词：

D O I：

10.1063/1.98175

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：466 / 468

页数：3

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