RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON

被引：105

作者：

NULMAN, J

KRUSIUS, JP

GAT, A

机构：

[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853

[2] AG ASSOCIATES,PALO ALTO,CA 94303

来源：

IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 05期

关键词：

D O I：

10.1109/EDL.1985.26099

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：205 / 207

页数：3

共 50 条

[1] RAPID THERMAL-PROCESSING FOR THIN SILICON DIELECTRICS - GROWTH AND APPLICATIONS
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1988, 135 (03) : C123 - C123
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[8] RAPID THERMAL-OXIDATION OF SILICON FOR THIN GATE DIELECTRIC
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