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- [2] PERFORMANCE AND RELIABILITY OF SHORT-CHANNEL MOSFETS WITH SUPERIOR OXYNITRIDE GATE DIELECTRICS FABRICATED USING MULTIPLE RAPID THERMAL-PROCESSING [J]. 1989 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS: PROCEEDINGS OF TECHNICAL PAPERS, 1989, : 197 - 201
- [4] PERFORMANCE AND RELIABILITY OF ULTRATHIN OXYNITRIDE GATE DIELECTRICS PREPARED USING INSITU MULTIPLE RAPID THERMAL-PROCESSING [J]. RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 313 - 318
- [5] Compact current modeling of short-channel multiple gate MOSFETs [J]. PHYSICA STATUS SOLIDI C - CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 5, NO 12 2008, 2008, 5 (12): : 3609 - 3612
- [7] 5 NM GATE OXIDE GROWN BY RAPID THERMAL-PROCESSING FOR FUTURE MOSFETS [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1990, 29 (01): : L137 - L140
- [10] ULTRATHIN GATE DIELECTRICS ON 150 MM SI WAFERS VIA RAPID THERMAL-PROCESSING [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1986, 4 (03): : 1005 - 1008