RAPID THERMAL-PROCESSING OF THIN GATE DIELECTRICS - OXIDATION OF SILICON

被引：105
|
作者：
NULMAN, J
KRUSIUS, JP
GAT, A
机构：
[1] CORNELL UNIV,NATL RES & RESOURCE FACIL SUBMICRON STRUCT,ITHACA,NY 14853
[2] AG ASSOCIATES,PALO ALTO,CA 94303
来源：
IEEE ELECTRON DEVICE LETTERS | 1985年 / 6卷 / 05期
关键词：
D O I：
10.1109/EDL.1985.26099
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：205 / 207
页数：3
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