GROWTH OF INSITU DOPED SILICON EPITAXIAL LAYER BY RAPID THERMAL-PROCESSING

被引：1

作者：

LEE, SK

KU, YH

HSIEH, TY

JUNG, KH

KWONG, DL

SPRATT, D

CHU, P

机构：

[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265

[2] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 16期

关键词：

D O I：

10.1063/1.104069

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.

引用

页码：1628 / 1630

页数：3

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