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- [1] SILICON EPITAXIAL-GROWTH ON SILICON-ON-INSULATOR STRUCTURES BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1990, 57 (23) : 2425 - 2427HSIEH, TYJUNG, KHKWONG, DL
- [2] THE RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION OF SILICON EPITAXIAL-FILMSJOM-JOURNAL OF THE MINERALS METALS & MATERIALS SOCIETY, 1991, 43 (10): : 38 - 43JUNG, KHHSIEH, TYKWONG, DL
- [3] SELECTIVE EPITAXIAL-GROWTH WITH OXIDE-POLYCRYSTALLINE SILICON-OXIDE MASKS BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1990, 57 (09) : 872 - 874HSIEH, TYJUNG, KHKWONG, DLSPRATT, DB
- [4] DOPANT-ENHANCED LOW-TEMPERATURE EPITAXIAL-GROWTH OF INSITU DOPED SILICON BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1991, 58 (01) : 80 - 82HSIEH, TYJUNG, KHKIM, YMKWONG, DL
- [5] SILICON EPITAXIAL-GROWTH ON GAAS USING A RAPID THERMAL CHEMICAL VAPOR-DEPOSITION PROCESSAPPLIED PHYSICS LETTERS, 1991, 59 (06) : 656 - 658NISSIM, YISAPRIEL, JGAO, YDANTERROCHES, CREGOLINI, JLBENSAHEL, D
- [6] ROLE OF DOPANT INCORPORATION IN LOW-TEMPERATURE SI EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITIONIEEE TRANSACTIONS ON ELECTRON DEVICES, 1992, 39 (01) : 203 - 205HSIEH, TYJUNG, KHKWONG, DLHITZMAN, CJBRENNAN, R
- [7] EPITAXIAL-GROWTH OF GERMANIUM ON SILICON BY CHEMICAL VAPOR-DEPOSITIONJOURNAL OF ELECTRONIC MATERIALS, 1987, 16 (04) : A28 - A28GREEN, MLALI, YSBRASEN, DWILLENS, RH
- [8] SILICON HOMOEPITAXY BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION (RTPCVD) - A REVIEWJOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (04) : 1188 - 1207HSIEH, TYJUNG, KHKWONG, DLLEE, SK
- [9] SELECTIVE DEPOSITION OF INSITU DOPED POLYCRYSTALLINE SILICON BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITIONAPPLIED PHYSICS LETTERS, 1989, 55 (23) : 2408 - 2410HSIEH, TYCHUN, HGKWONG, DL
- [10] SELECTIVE EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSINGAPPLIED PHYSICS LETTERS, 1990, 57 (03) : 273 - 275LEE, SKKU, YHHSIEH, TYJUNG, KKWONG, DL