SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引：25
|
作者：
LEE, SK
KU, YH
KWONG, DL
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期
关键词：
D O I：
10.1063/1.101288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1775 / 1777
页数：3
相关论文
共 50 条
  • [41] EPITAXIAL-GROWTH OF FE ON GAAS BY METALORGANIC CHEMICAL VAPOR-DEPOSITION IN ULTRAHIGH-VACUUM
    KAPLAN, R
    BOTTKA, N
    APPLIED PHYSICS LETTERS, 1982, 41 (10) : 972 - 974
  • [42] TEMPERATURE-DEPENDENCE OF EPITAXIAL-GROWTH OF AL ON SI(111) BY CHEMICAL VAPOR-DEPOSITION
    NISHIKAWA, S
    TANI, K
    YAMAJI, T
    JOURNAL OF MATERIALS RESEARCH, 1992, 7 (02) : 345 - 351
  • [43] A THEORETICAL-ANALYSIS OF EPITAXIAL-GROWTH OF CUINS2 BY CHEMICAL VAPOR-DEPOSITION
    SUN, CY
    HWANG, HL
    FANG, CS
    LIU, DC
    HORNG, MH
    NUOVO CIMENTO DELLA SOCIETA ITALIANA DI FISICA D-CONDENSED MATTER ATOMIC MOLECULAR AND CHEMICAL PHYSICS FLUIDS PLASMAS BIOPHYSICS, 1983, 2 (06): : 1658 - 1663
  • [44] EPITAXIAL-GROWTH OF (011) AL ON (100) SI BY VAPOR-DEPOSITION
    THANGARAJ, N
    WESTMACOTT, KH
    DAHMEN, U
    APPLIED PHYSICS LETTERS, 1992, 61 (01) : 37 - 39
  • [45] EPITAXIAL-GROWTH OF GAINP ON (111)A AND (111)B SURFACES BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
    MORITA, E
    IKEDA, M
    INOUE, M
    KANEKO, K
    JOURNAL OF CRYSTAL GROWTH, 1990, 106 (2-3) : 197 - 207
  • [46] EPITAXIAL-GROWTH OF AL ON SI BY GAS-TEMPERATURE-CONTROLLED CHEMICAL VAPOR-DEPOSITION
    KOBAYASHI, T
    SEKIGUCHI, A
    HOSOKAWA, N
    ASAMAKI, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1988, 27 (09): : L1775 - L1777
  • [47] EPITAXIAL-GROWTH OF BI12SIO20 FILMS BY CHEMICAL VAPOR-DEPOSITION
    NAGAO, Y
    MIMURA, Y
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1985, 24 (12): : L954 - L955
  • [48] EPITAXIAL-GROWTH OF (001) AL ON (111) SI BY VAPOR-DEPOSITION
    THANGARAI, N
    WESTMACOTT, KH
    DAHMEN, U
    APPLIED PHYSICS LETTERS, 1992, 61 (08) : 913 - 915
  • [49] CHEMICAL VAPOR-DEPOSITION OF SELECTIVE EPITAXIAL SILICON LAYERS
    PAI, CS
    KNOELL, RV
    PAULNACK, CL
    LANGER, PH
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1990, 137 (03) : 971 - 976
  • [50] EPITAXIAL-GROWTH OF SILICON BY PLASMA CHEMICAL VAPOR-DEPOSITION AT A VERY LOW-TEMPERATURE OF 250-DEGREES-C
    NAGAMINE, K
    YAMADA, A
    KONAGAI, M
    TAKAHASHI, K
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1987, 26 (06): : L951 - L953
12345