SILICON EPITAXIAL-GROWTH BY RAPID THERMAL-PROCESSING CHEMICAL VAPOR-DEPOSITION

被引：25
|
作者：
LEE, SK
KU, YH
KWONG, DL
机构：
来源：
APPLIED PHYSICS LETTERS | 1989年 / 54卷 / 18期
关键词：
D O I：
10.1063/1.101288
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：1775 / 1777
页数：3
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