GROWTH OF EPITAXIAL NICKEL DISILICIDE DURING RAPID THERMAL-PROCESSING OF ARGON-IMPLANTED NICKEL FILMS ON SILICON

被引：1
|
作者：
TOKAREV, VV
BORISENKO, VE
DEMCHENKO, AI
PYATKOVA, TM
机构：
[1] MINSK RADIOENGN INST,MINSK 220600,BELORUSSIA,USSR
[2] URAL POLYTECH INST,SVERDLOVSK 620002,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1989年 / 116卷 / 01期
关键词：
D O I：
10.1002/pssa.2211160130
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：331 / 336
页数：6
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