DOPANT REDISTRIBUTION DURING THE FORMATION OF TUNGSTEN DISILICIDE BY RAPID THERMAL-PROCESSING

被引：1
|
作者：
DUPUY, JC
ESSAADANI, A
SIBAI, A
BARBIER, D
机构：
[1] Laboratoire de Physique, la Matière associé au CNRS (URA 358), INSA Lyon
来源：
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 1994年 / 22卷 / 2-3期
关键词：
D O I：
10.1016/0921-5107(94)90240-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We studied arsenic redistribution with annealing time in the Si-W system during the formation of WSi2 by rapid thermal processing at 850 degrees C. The silicon was arsenic doped and the tungsten was deposited by sputtering. A significant amount of arsenic diffuses back and segregates at the WSi2-Si interface, the remainder is incorporated in the disilicide. This behavior is quite different from that of boron, which diffuses simultaneously to the silicon through the disilicide layer.
引用
收藏
页码：168 / 171
页数：4
相关论文
共 50 条
12345