THE EFFECTS OF DOPANT AND IMPURITY REDISTRIBUTIONS ON WSI2 FORMATION BY RAPID THERMAL-PROCESSING

被引：10
|
作者：
SIEGAL, MP [1 ]
SANTIAGO, JJ [1 ]
机构：
[1] UNIV PENN,MOORE SCH ELECT ENGN,CTR SENSORS TECHNOL,PHILADELPHIA,PA 19104
来源：
JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期
关键词：
D O I：
10.1063/1.343065
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：760 / 766
页数：7
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