THE EFFECTS OF DOPANT AND IMPURITY REDISTRIBUTIONS ON WSI2 FORMATION BY RAPID THERMAL-PROCESSING

被引：10

作者：

SIEGAL, MP ^{[1
]}

SANTIAGO, JJ ^{[1
]}

机构：

[1] UNIV PENN,MOORE SCH ELECT ENGN,CTR SENSORS TECHNOL,PHILADELPHIA,PA 19104

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 65卷 / 02期

关键词：

D O I：

10.1063/1.343065

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：760 / 766

页数：7

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