GROWTH OF INSITU DOPED SILICON EPITAXIAL LAYER BY RAPID THERMAL-PROCESSING

被引：1
|
作者：
LEE, SK
KU, YH
HSIEH, TY
JUNG, KH
KWONG, DL
SPRATT, D
CHU, P
机构：
[1] TEXAS INSTRUMENTS INC,DALLAS,TX 75265
[2] CHARLES EVANS & ASSOCIATES,REDWOOD CITY,CA 94063
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 16期
关键词：
D O I：
10.1063/1.104069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device quality epilayers have been obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these doped epilayers are very close to the values for bulk silicon under the same doping concentration.
引用
收藏
页码：1628 / 1630
页数：3
相关论文
共 50 条
  • [31] RAPID THERMAL-PROCESSING IN SEMICONDUCTOR TECHNOLOGY
    HART, MJ
    EVANS, AGR
    [J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1988, 3 (05) : 421 - 436
  • [32] TRANSIENT EFFECTS IN RAPID THERMAL-PROCESSING
    CAMPBELL, SA
    KNUTSON, KL
    [J]. IEEE TRANSACTIONS ON SEMICONDUCTOR MANUFACTURING, 1992, 5 (04) : 302 - 307
  • [33] RAPID THERMAL-PROCESSING FOR VLSI APPLICATION
    WIESER, E
    GERISCH, D
    KAHLERT, V
    [J]. EPM 87: ENERGY PULSE AND PARTICLE BEAM MODIFICATION OF MATERIALS, 1988, 8 : 80 - 86
  • [34] EFFECTS OF RAPID THERMAL-PROCESSING ON ELECTRON TRAPS IN MOLECULAR-BEAM-EPITAXIAL GAAS
    KITAGAWA, A
    USAMI, A
    WADA, T
    TOKUDA, Y
    KANO, H
    [J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (02) : 606 - 611
  • [35] DIFFUSION OF BORON INTO SILICON FROM BOROSILICATE GLASS USING RAPID THERMAL-PROCESSING
    MIYAKE, M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (10) : 3031 - 3039
  • [36] INFLUENCE OF RAPID THERMAL-PROCESSING ON MINORITY-CARRIER DIFFUSION LENGTH IN SILICON
    EICHAMMER, WA
    VU, TQ
    SIFFERT, P
    [J]. RAPID THERMAL ANNEALING / CHEMICAL VAPOR DEPOSITION AND INTEGRATED PROCESSING, 1989, 146 : 185 - 190
  • [37] HIGH-EFFICIENCY SILICON SOLAR-CELLS BY RAPID THERMAL-PROCESSING
    ROHATGI, A
    CHEN, Z
    DOSHI, P
    PHAM, T
    RUBY, D
    [J]. APPLIED PHYSICS LETTERS, 1994, 65 (16) : 2087 - 2089
  • [38] SILICON TEMPERATURE-MEASUREMENT BY INFRARED TRANSMISSION FOR RAPID THERMAL-PROCESSING APPLICATIONS
    STURM, JC
    SCHWARTZ, PV
    GARONE, PM
    [J]. APPLIED PHYSICS LETTERS, 1990, 56 (10) : 961 - 963
  • [39] INSITU THICKNESS MONITORING OF SILICON EPITAXIAL LAYER
    SUGAWARA, K
    YOSHIMI, T
    NAKAZAWA, Y
    ITOH, K
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 759 - 761
  • [40] EFFECT OF RAPID THERMAL ANNEALING ON THE STRAIN RELAXATION IN HEAVILY BORON-DOPED SILICON EPITAXIAL LAYER
    WANG, JB
    XU, Q
    YUAN, J
    LU, F
    SUN, HH
    WANG, X
    [J]. JOURNAL OF APPLIED PHYSICS, 1995, 77 (07) : 2974 - 2977
12345