The influence of fluorine on boron-enhanced diffusion in silicon by BF2+ implantation through oxide during high temperature rapid thermal anneal

被引：2

作者：

Wang, LZ ^{[1
]}

Luo, MSC ^{[1
]}

Tseng, HH ^{[1
]}

Ajuria, SA ^{[1
]}

机构：

[1] MOTOROLA INC,ADV PROD RES & DEV LAB,AUSTIN,TX 78721

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1997年 / 144卷 / 11期

关键词：

D O I：

10.1149/1.1838075

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

BF2+ implantation through a sacrificial oxide for the formation of p(+)/n shallow junctions is frequently applied in device fabrication. The effects of fluorine on boron diffusion in and out of a silicon substrate during nitrogen-ambient high temperature rapid thermal annealing have been studied. By comparing B and BF2 implanted substrates, it is shown that fluorine out-diffusion during high temperature annealing coincides with enhanced boron out-diffusion into the oxide and suppressed boron diffusion into the substrate. In particular, when fluorine accumulated at the end of range dislocation loops is driven out of the bulk, shallower junctions are observed.

引用

页码：L298 / L301

页数：4

共 30 条

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