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- [1] The effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100)silicon through a protecting maskNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 112 (1-4): : 196 - 200Kaabi, LRemaki, BGontrand, CLo, PFBalland, B
- [2] FORMATION OF SHALLOW P+N JUNCTIONS BY IMPLANTING BF2+ IONS INTO THIN COBALT FILMS ON SILICON SUBSTRATESSOLID-STATE ELECTRONICS, 1992, 35 (04) : 453 - 457JUANG, MHCHENG, HC
- [3] Formation of NiSi-silicided p+n shallow junctions by BF2+ implantation into/through silicide and rapid thermal annealingJAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2005, 44 (1A): : 108 - 113Wang, CCWu, YKWu, WHChen, MC
- [4] SHALLOW JUNCTIONS FORMED BY BF2+ IMPLANTATION INTO THIN COSI FILMS AND RAPID THERMAL ANNEALINGJOURNAL OF APPLIED PHYSICS, 1994, 76 (02) : 1323 - 1325JUANG, MHLIN, CTCHENG, HC
- [7] Investigation of BF2+ implants in silicon through SiO2 films - Redistribution of fluorine and boron under rapid thermal annealingNUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1996, 120 (1-4): : 68 - 73Kaabi, LGontrand, CLemiti, MRemaki, BBalland, BMeddeb, JMarty, O
- [8] Effects of rapid thermal annealing on the formation of shallow p+n junction by implanting BF2+ ions into thin metal films on Si substrate I. thin titanium filmsJournal of Applied Physics, 1992, 71 (03):Juang, M.H.Cheng, H.C.