Effect of rapid thermal treatments on the formation of shallow junctions by implanting boron and BF2+ ions into (100) silicon through a protecting mask

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Inst Natl des Sciences Appliquees de, Lyon, Villeurbanne, France ^{[1
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Nucl Instrum Methods Phys Res Sect B | / 1-4卷 / 196-200期

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[11] The influence of fluorine on boron-enhanced diffusion in silicon by BF2+ implantation through oxide during high temperature rapid thermal anneal
Wang, LZ
Luo, MSC
Tseng, HH
Ajuria, SA
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1997, 144 (11) : L298 - L301
[12] RECENT ADVANCES IN THE RAPID THERMAL ANNEALING OF BORON AND BF2+ IMPLANTED SOURCE-DRAIN JUNCTIONS FOR SUBMICROMETER CMOS TECHNOLOGY
VASUDEV, PK
SCHMITZ, A
OLSON, GL
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (12) : 1966 - 1966
[13] Formation of NiSi-silicided p+n shallow junctions by BF 2+ implantation into/through suicide and rapid thermal annealing
Wang, Chao-Chun
Wu, You-Kuo
Wu, Wei-Hao
Chen, Mao-Chieh
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2005, 44 (1 A): : 108 - 113
[14] Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions
Agarwal, A
Gossmann, HJ
Fiory, AT
JOURNAL OF ELECTRONIC MATERIALS, 1999, 28 (12) : 1333 - 1339
[15] Effect of ramp rates during rapid thermal annealing of ion implanted boron for formation of ultra-shallow junctions
Aditya Agarwal
Hans-J. Gossmann
Anthony T. Fiory
Journal of Electronic Materials, 1999, 28 : 1333 - 1339
[16] Ultra-shallow N+P and P+N junction formation using low energy high dose As+ and BF2+ implantation and rapid thermal anneal
Kal, S
Kasko, I
Ryssel, H
SEMICONDUCTOR DEVICES, 1996, 2733 : 487 - 489
[17] SHALLOW-JUNCTION DIODE FORMATION BY IMPLANTATION OF ARSENIC AND BORON THROUGH TISI2 FILM AND RAPID THERMAL ANNEALING - REPLY
HERBOTS, N
RUBIN, L
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) : 1562 - 1563
[18] SHALLOW-JUNCTION DIODE FORMATION BY IMPLANTATION OF ARSENIC AND BORON THROUGH TISI2 FILM AND RAPID THERMAL ANNEALING - COMMENT
LIU, R
LU, CY
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1991, 38 (06) : 1561 - 1562
[19] FORMATION OF TiNTiSi2/P + -Si/N-Si BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM.
Delfino, M.
Broadbent, E.K.
Morgan, A.E.
Burrow, B.J.
Norcott, M.H.
Electron device letters, 1985, EDL-6 (11): : 591 - 593
[20] FORMATION OF TIN/TISI2/P+-SI/N-SI BY RAPID THERMAL ANNEALING (RTA) SILICON IMPLANTED WITH BORON THROUGH TITANIUM
DELFINO, M
BROADBENT, EK
MORGAN, AE
BURROW, BJ
NORCOTT, MH
IEEE ELECTRON DEVICE LETTERS, 1985, 6 (11) : 591 - 593

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