Study of BF2 ion implantation into crystalline silicon:: Influence of fluorine on boron diffusion

被引：0
|
作者：
Ihaddadene-Lecoq, L [1 ]
Marcon, J [1 ]
Ketata, K [1 ]
机构：
[1] Univ Rouen, Lab Elect Microtechnol & Instrumentat, F-76821 Mont St Aignan, France
来源：
SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY | 2004年 / 810卷
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated and modeled the diffusion of boron in planted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1x10(15) cm(-2) implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950degreesC, 1000degreesC, 1050degreesC and 1100degreesC during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.
引用
收藏
页码：351 / 356
页数：6
相关论文
共 50 条
  • [1] A study of the boron profiles caused by BF2 implantation in crystalline silicon
    Jung, WC
    [J]. JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2005, 46 (05) : 1218 - 1223
  • [2] Accurate Monte Carlo simulation of fluorine and BF2 ion implantation into crystalline silicon
    Tian, SY
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2004, 215 (3-4): : 403 - 412
  • [3] Diffusion modelling of low-energy ion-implanted BF2 in crystalline silicon: Study of fluorine vacancy effect on boron diffusion
    Marcon, J.
    Merabet, A.
    [J]. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 2008, 154 (216-220): : 216 - 220
  • [4] Implantation of silicon using the boron cluster BF2
    Smith, R
    Harrison, M
    Webb, R
    [J]. THIN SOLID FILMS, 1999, 343 : 602 - 604
  • [5] ANOMALOUS BORON PROFILES PRODUCED BY BF2 IMPLANTATION INTO SILICON
    SIGMON, TW
    DELINE, VR
    EVANS, CA
    KATZ, WM
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (04) : 981 - 982
  • [6] BORON, FLUORINE, AND CARRIER PROFILES FOR B AND BF2 IMPLANTS INTO CRYSTALLINE AND AMORPHOUS SI
    WILSON, RG
    [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (12) : 6879 - 6889
  • [7] Influence of fluorine on the simulation of the transient enhanced diffusion of 15 keV BF+2 ion implantation into silicon
    Dusch, A
    Marcon, J
    Masmoudi, K
    Ketata, K
    Olivié, F
    Benhzora, M
    Ketata, M
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2002, 186 (1-4): : 360 - 365
  • [8] BF2 ION-IMPLANTATION IN SILICON THROUGH SURFACE OXIDES, BEHAVIOR OF THE FLUORINE WITH RAPID THERMAL ANNEALING
    OZTURK, MC
    WORTMAN, JJ
    CHU, WK
    ROZGONYI, G
    GRIFFIS, DP
    [J]. MATERIALS LETTERS, 1987, 5 (09) : 311 - 314
  • [9] Comparison of ultra-low-energy ion implantation of boron and BF2
    Park, J
    Hwang, H
    [J]. SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 71 - 75
  • [10] Simulation of boron diffusion in high-dose BF2 implanted silicon
    Uematsu, M
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 2000, 39 (4A): : 1608 - 1611
12345