Study of BF2 ion implantation into crystalline silicon:: Influence of fluorine on boron diffusion

被引：0
|
作者：
Ihaddadene-Lecoq, L [1 ]
Marcon, J [1 ]
Ketata, K [1 ]
机构：
[1] Univ Rouen, Lab Elect Microtechnol & Instrumentat, F-76821 Mont St Aignan, France
来源：
SILICON FRONT-END JUNCTION FORMATION-PHYSICS AND TECHNOLOGY | 2004年 / 810卷
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中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We have investigated and modeled the diffusion of boron in planted into crystalline silicon in the form of boron difluoride BF2+. Low energy BF2+ 1x10(15) cm(-2) implantations at 2.0keV were characterized using Secondary Ion Mass Spectrometry (SIMS) in order to measure dopant profiles. RTA was carried out at 950degreesC, 1000degreesC, 1050degreesC and 1100degreesC during 10s, 20s, 30s and 60s. The results show that concentration profiles for BF2+ implant are shallower than those for a direct B+ ion implantation. This could be attributed to the presence of fluorine which trap interstitial Si so that interstitial silicon supersaturation is low near the surface.
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页码：351 / 356
页数：6
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