OBSERVATION OF SLIP DISLOCATIONS IN (100) SILICON-WAFERS AFTER BF2 ION-IMPLANTATION AND RAPID THERMAL ANNEALING

被引：6
|
作者：
RITZ, KN [1 ]
DELFINO, M [1 ]
COOPER, CB [1 ]
POWELL, RA [1 ]
机构：
[1] VARIAN ASSOCIATES,VARIAN RES CTR,PALO ALTO,CA 94303
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 60卷 / 02期
关键词：
D O I：
10.1063/1.337377
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：800 / 802
页数：3
相关论文
共 50 条
  • [1] OBSERVATION OF SLIP DISLOCATIONS IN (100) AND (111) SILICON-WAFERS AFTER RAPID THERMAL-PROCESSING
    RITZ, KN
    DELFINO, M
    STACY, WT
    COOPER, CB
    POWELL, RA
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1984, 131 (08) : C316 - C316
  • [2] BF2 ION-IMPLANTATION IN SILICON THROUGH SURFACE OXIDES, BEHAVIOR OF THE FLUORINE WITH RAPID THERMAL ANNEALING
    OZTURK, MC
    WORTMAN, JJ
    CHU, WK
    ROZGONYI, G
    GRIFFIS, DP
    [J]. MATERIALS LETTERS, 1987, 5 (09) : 311 - 314
  • [3] SENSITIVITY ANALYSIS OF ION-IMPLANTED SILICON-WAFERS AFTER RAPID THERMAL ANNEALING
    KIM, YT
    JUN, CH
    BAEK, JT
    YOO, HJ
    [J]. JOURNAL OF ELECTRONIC MATERIALS, 1995, 24 (10) : 1413 - 1417
  • [4] Redistribution of boron and fluorine atoms in BF2 implanted silicon wafers during rapid thermal annealing
    Yoo, SY
    Fukada, T
    Setokubo, T
    Aizawa, K
    Ohsawa, T
    [J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (03): : 1123 - 1128
  • [5] MEV ION-IMPLANTATION SYSTEMS FOR PRODUCTION PROCESSING OF SILICON-WAFERS
    NORTON, GA
    KLODY, GM
    [J]. IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (02) : 1701 - 1704
  • [6] ION-IMPLANTATION AND RAPID ANNEALING OF 125 MM WAFERS
    CURRENT, M
    YEE, A
    [J]. SOLID STATE TECHNOLOGY, 1983, 26 (10) : 197 - 202
  • [7] TRAP GENERATION IN OXIDIZED SILICON-WAFERS BY RAPID THERMAL ANNEALING
    VASUDEV, PK
    HENDERSON, RC
    CAPLAN, PJ
    POINDEXTER, EH
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (08) : C330 - C330
  • [8] TEMPERATURE TRANSIENTS OF ION-IMPLANTED SILICON-WAFERS DURING RAPID THERMAL ANNEALING
    UOOCHI, Y
    SHIOYA, Y
    MAEDA, M
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1987, 134 (8A) : 2007 - 2010
  • [9] STUDY OF ION-IMPLANTATION AND ANNEALING EFFECTS IN SILICON-WAFERS USING HIGH-FREQUENCY PHONON-SCATTERING
    STRICKLAND, KR
    EDWARDS, SC
    WIGMORE, JK
    COLLINS, RA
    JEYNES, C
    [J]. SURFACE AND INTERFACE ANALYSIS, 1992, 18 (08) : 631 - 636
  • [10] A REVIEW OF RAPID THERMAL ANNEALING (RTA) OF B, BF2 AND AS IONS IMPLANTED INTO SILICON
    SEIDEL, TE
    LISCHNER, DJ
    PAI, CS
    KNOELL, RV
    MAHER, DM
    JACOBSON, DC
    [J]. NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1985, 7-8 (MAR): : 251 - 260
12345