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TRAP GENERATION IN OXIDIZED SILICON-WAFERS BY RAPID THERMAL ANNEALING
被引:0
|
作者
:
VASUDEV, PK
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
VASUDEV, PK
HENDERSON, RC
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
HENDERSON, RC
CAPLAN, PJ
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
CAPLAN, PJ
POINDEXTER, EH
论文数:
0
引用数:
0
h-index:
0
机构:
HUGHES RES LABS,MALIBU,CA 90265
POINDEXTER, EH
机构
:
[1]
HUGHES RES LABS,MALIBU,CA 90265
[2]
ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
来源
:
JOURNAL OF THE ELECTROCHEMICAL SOCIETY
|
1986年
/ 133卷
/ 08期
关键词
:
D O I
:
暂无
中图分类号
:
O646 [电化学、电解、磁化学];
学科分类号
:
081704 ;
摘要
:
引用
收藏
页码:C330 / C330
页数:1
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