TRAP GENERATION IN OXIDIZED SILICON-WAFERS BY RAPID THERMAL ANNEALING

被引：0
|
作者：
VASUDEV, PK
HENDERSON, RC
CAPLAN, PJ
POINDEXTER, EH
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
[2] ELECTR TECHNOL & DEVICES LAB,FT MONMOUTH,NJ 07703
来源：
JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1986年 / 133卷 / 08期
关键词：
D O I：
暂无
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：C330 / C330
页数：1
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