DEFECTS INTRODUCED IN SILICON-WAFERS DURING RAPID ISOTHERMAL ANNEALING - THERMOELASTIC AND THERMOPLASTIC EFFECTS

被引：87
|
作者：
BENTINI, G
CORRERA, L
DONOLATO, C
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1984年 / 56卷 / 10期
关键词：
D O I：
10.1063/1.333832
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：2922 / 2929
页数：8
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